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| SUD50P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) -40 rDS(on) (W) 0.015 @ VGS = -10 V 0.023 @ VGS = -4.5 V ID (A) -50 -45 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50P04-15 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentb Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit -40 "20 -50 -40 Unit V A -150 -50 100b 3a -55 to 175 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See SOA curve for voltage derating. Document Number: 71176 S-00830--Rev. A, 24-Apr-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec. Steady State Symbol RthJA RthJC Typical 15 40 1.2 Maximum 18 50 1.5 Unit _C/W 1 SUD50P04-15 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -40 V, VGS = 0 V VDS = -40 V, VGS = 0 V, TJ = 125_C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -30 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = -10 V, ID = -30 A, TJ = 125_C VGS = -4.5 V, ID = -20 A Forward Transconductancea gfs VDS = -15 V, ID = -30 A 20 0.018 -120 0.012 0.015 0.024 0.023 S W -40 V -1.0 "100 -1 -50 nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = -20 V, RL = 0 4 W 20 V, 0.4 ID ^ -50 A, VGEN = -10 V RG = 2 5 W 50 A 10 V, 2.5 VDS = -20 V VGS = -10 V ID = -50 A 20 V, 10 V, 50 VGS = 0 V, VDS = -25 V, f = 1 MHz 5400 640 300 85 25 15 15 380 75 140 25 580 ns 115 210 130 nC C pF F Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltagea Source-Drain Reverse Recovery Time ISM VSD trr IF = -50 A, VGS = 0 V IF = -50 A, di/dt = 100 A/ms -1.2 40 -150 -1.5 80 A V ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 71176 S-00830--Rev. A, 24-Apr-00 SUD50P04-15 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10, 9, 8 V 200 I D - Drain Current (A) I D - Drain Current (A) 7V 6V 80 25_C 150 5V 100 60 125_C TC = -55_C 100 Vishay Siliconix Transfer Characteristics 40 50 4V 2, 3 V 20 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 80 TC = -55_C 25_C g fs - Transconductance (S) 60 r DS(on) - On-Resistance ( ) 125_C 0.03 0.04 On-Resistance vs. Drain Current VGS = 4.5 V 40 0.02 VGS = 10 V 0.01 20 0 0 20 40 60 80 100 0 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 8000 20 Gate Charge V GS - Gate-to-Source Voltage (V) 6000 C - Capacitance (pF) Ciss 16 VDS = 20 V ID = 50 A 12 4000 8 2000 Coss Crss 4 0 0 5 10 15 20 25 30 0 0 40 80 120 160 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 71176 S-00830--Rev. A, 24-Apr-00 www.vishay.com S FaxBack 408-970-5600 3 SUD50P04-15 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance ( ) (Normalized) 2.0 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 TJ = 150_C TJ = 25_C 10 1.0 0.5 0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Case Temperature 60 500 Safe Operating Area 50 I D - Drain Current (A) I D - Drain Current (A) 100 Limited by rDS(on) 10 ms 100 ms 40 30 10 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse 20 1 10 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Case Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.02 0.05 Single Pulse t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 40_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 30 www.vishay.com S FaxBack 408-970-5600 4 Document Number: 71176 S-00830--Rev. A, 24-Apr-00 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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